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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
December 2008
FDS8958B
Dual N & P-Channel PowerTrench(R) MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 m
Features
Q1: N-Channel Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A Max rDS(on) = 39 m at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel Max rDS(on) = 51 m at VGS = -10 V, ID = -4.5 A Max rDS(on) = 80 m at VGS = -4.5 V, ID = -3.3 A HBM ESD protection level > 3.5 kV (Note 3) RoHS Compliant
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Application
DC-DC Conversion BLU and motor drive inverter
D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 1 S1 D2 D2 D1 5 6
Q1 Q2
4 3 2
G2 S2 G1
7
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation PD EAS TJ, TSTG Power Dissipation for Single Operation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25 C TA = 25 C (Note 1a) (Note 1b) (Note 4) 18 -55 to +150 TA = 25 C Q1 30 20 6.4 30 2.0 1.6 0.9 5 mJ C W Q2 -30 25 -4.5 -30 Units V V A
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 40 78 C/W
Package Marking and Ordering Information
Device Marking FDS8958B Device FDS8958B Package SO-8
1
Reel Size 13 "
Tape Width 12 mm
Quantity 2500 units
www.fairchildsemi.com
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = -250 A, VGS = 0 V ID = 250 A, referenced to 25 C ID = -250 A, referenced to 25 C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 25 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 -30 24 -21 1 -1 100 10 V mV/C A nA A
On Characteristics
VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A VGS = VDS, ID = -250 A ID = 250 A, referenced to 25 C ID = -250 A, referenced to 25 C VGS = 10 V, ID = 6.4 A VGS = 4.5 V, ID = 5.2 A VGS = 10 V, ID = 6.4A, TJ = 125 C VGS = -10 V, ID = -4.5 A VGS = -4.5 V, ID = -3.3 A VGS = -10 V, ID = -4.5 A, TJ = 125 C VDD = 5 V, ID = 6.4 A VDD = -5 V, ID = -4.5 A Q1 Q2 Q1 Q2 Q1 1.0 -1.0 2.0 -1.9 -6 5 21 29 31 38 60 53 20 10 26 39 39 51 80 72 3.0 -3.0 V mV/C
rDS(on)
Static Drain to Source On Resistance
m
Q2 Q1 Q2
gFS
Forward Transconductance
S
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1 VDS = 15 V, VGS = 0 V, f = 1 MHZ Q2 VDS = -15 V, VGS = 0 V, f = 1 MHZ Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 405 570 75 115 55 100 2.4 4.4 540 760 100 155 80 150 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge Q1 VDD = 15 V, ID = 6.4 A, VGS = 10 V, RGEN = 6 Q2 VDD = -15 V, ID = -4.5 A, VGS = -10 V, RGEN = 6 VGS = 10 V VGS = -10 V VGS = 4.5 V VGS = -4.5 V Q1 VDD = 15 V, ID = 6.4 A Q2 VDD = -15 V, ID = -4.5 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 4.3 6.0 2.0 6.0 12 17 2.0 7.0 8.3 14 4.1 7.0 1.3 1.9 1.7 3.6 10 12 10 12 22 30 10 14 12 19 5.8 9.6 ns ns ns ns nC nC nC nC
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
2
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 0.8 -0.8 17 20 6 8 1.2 -1.2 30 36 12 16 V ns nC
Q1 IF = 6.4 A, di/dt = 100 A/s Q2 IF = -4.5 A, di/dt = 100 A/s
NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78 C/W when mounted on a 1 in2 pad of 2 oz copper b) 135 C/W when mounted on a minimun pad
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. UIL condition: Starting TJ = 25 C, L = 1 mH, IAS = 6 A, VDD = 27 V, VGS = 10 V . (Q1) Starting TJ = 25 C, L = 1 mH, IAS = -4 A, VDD = -27 V, VGS = -10 V. (Q2)
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
3
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted
30
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V ID, DRAIN CURRENT (A)
3.0
VGS = 3.5 V
VGS = 6 V VGS = 4.5 V VGS = 4 V
24 18 12 6
2.5 2.0 1.5 1.0
VGS = 4 V
VGS = 4.5 V
VGS = 6 V
VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
VGS = 10 V
0 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.5 0 6 12 18 24 30
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
75
SOURCE ON-RESISTANCE (m)
ID = 6.4 A VGS = 10 V
1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
60
ID = 3.2 A
rDS(on), DRAIN TO
45
TJ = 125 oC
30
TJ = 25 oC
-50
-25
0
25
50
75
100 125 150
15 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction Temperature
30 25
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
30
VGS = 0 V
10
TJ = 125 oC
VDS = 5 V
20 15 10 5 0 1 2 3 4 5 6
VGS, GATE TO SOURCE VOLTAGE (V) TJ = 125 oC TJ = 25 oC TJ = -55 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01 0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 6.4 A
1000
Ciss
CAPACITANCE (pF)
8
VDD = 10 V
6
VDD = 15 V
100
Coss
4
VDD = 20 V
Crss
f = 1 MHz VGS = 0 V
2 0 0 2 4 6 8 10
Qg, GATE CHARGE (nC)
10 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
100
THIS AREA IS LIMITED BY rDS(on) ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
9 8 7 6 5 4 3 2
TJ = 125 oC TJ = 25 oC
10
0.1 ms 1 ms
1
10 ms SINGLE PULSE TJ = MAX RATED RJA = 135 oC/W TA = 25 oC 100 ms 1s 10 s DC
0.1
1 0.001
0.01
0.1
1
10
100
0.01 0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching Capability
500
P(PK), PEAK TRANSIENT POWER (W)
Figure 10. Forward Bias Safe Operating Area
100
VGS = 10 V SINGLE PULSE RJA = 135 C/W
o o
10
TA = 25 C
1 0.5 -4 10 10
-3
10
-2
10
-1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
SINGLE PULSE RJA = 135 C/W
o
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
6
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 C unless otherwise noted
30
VGS = -6 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = -4.5 V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
4.5
VGS = -10 V
-ID, DRAIN CURRENT (A)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
VGS = -3.5 V VGS = -4 V VGS = -4.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX VGS = -6 V
24 18 12
VGS = -4 V
6
VGS = -3.5 V
0 0.0
VGS = -10 V
0.5
1.0
1.5
2.0
2.5
3.0
6
12
18
24
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 15. On- Region Characteristics
Figure 16. Normalized on-Resistance vs Drain Current and Gate Voltage
200
SOURCE ON-RESISTANCE (m)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -75
ID = -4.5 A VGS = -10 V
rDS(on), DRAIN TO
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
160
ID = -2.3 A
120 80 40
TJ = 25 oC
TJ = 125 oC
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0 2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. Normalized On-Resistance vs Junction Temperature
Figure 18. On-Resistance vs Gate to Source Voltage
30 25 20 15 10 5 0 1 2 3 4 5 6
-VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX -IS , REVERSE DRAIN CURRENT (A)
30
VGS = 0 V
10
-ID , DRAIN CURRENT (A)
VDS = -5 V
TJ = -55 oC
TJ = 25 oC TJ = 125 oC
TJ = 125 oC TJ = 25 oC
0.1
TJ = -55 oC
0.01 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Transfer Characteristics
Figure 20. Source to Drain Diode Forward Voltage vs Source Current
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
7
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 C unless otherwise noted
10
-VGS, GATE TO SOURCE VOLTAGE (V) ID = -4.5 A
2000 1000
CAPACITANCE (pF)
VDD = -10 V
8 6
VDD = -15 V
Ciss
4
VDD = -20 V
Coss
100
Crss
f = 1 MHz VGS = 0 V
2 0 0 3 6 9 12 15
Qg, GATE CHARGE (nC)
30 0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 21. Gate Charge Characteristics
Figure 22. Capacitance vs Drain to Source Voltage
10
-Ig, GATE LEAKAGE CURRENT(A)
-2
-IAS, AVALANCHE CURRENT (A)
8 7 6 5 4 3 2
TJ = 125 oC TJ = 25 oC
10 10 10 10 10 10
-3
VGS = 0V
-4
-5
TJ = 125oC
-6
-7
-8
TJ = 25oC
1 0.01
10
-9
0.1
1
10
0
5
10
15
20
25
30
35
tAV, TIME IN AVALANCHE (ms)
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 23. Unclamped Inductive Switching Capability
100
P(PK), PEAK TRANSIENT POWER (W)
THIS AREA IS LIMITED BY rDS(on)
Figure 24. Ig vs Vgs
200 100
VGS = -10 V
-ID, DRAIN CURRENT (A)
10
0.1 ms 1 ms
SINGLE PULSE RJA = 135 oC/W
1
10 ms SINGLE PULSE TJ = MAX RATED RJA = 135 oC/W TA = 25 oC 100 ms 1s 10 s DC
10
TA = 25 oC
0.1
1 0.5 -4 10 10
-3
0.01 0.01
0.1
1
10
100
10
-2
10
-1
1
10
100
1000
-VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 25. Forward Bias Safe Operating Area
Figure 26. Single Pulse Maximum Power Dissipation
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 C unless otherwise noted
2
1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2
0.01
SINGLE PULSE RJA = 135 C/W
o
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-1
0.002 -4 10
10
-3
10
-2
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 27. Junction-to-Ambient Transient Thermal Response Curve
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
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FDS8958B Dual N & P-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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Rev. I37
(c)2008 Fairchild Semiconductor Corporation FDS8958B Rev.B
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